IPP12CNE8N G

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Overview of IPP12CNE8N G

Part NumberIPP12CNE8N G
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 85V 67A TO220-3
DatasheetsDownload IPP12CNE8N G Datasheet PDFPDF Icon
Price for IPP12CNE8N G

Specification of IPP12CNE8N G

Status
Obsolete
Series
OptiMOS™
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
85 V
Current - Continuous Drain (Id) @ 25C
67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
12.9mOhm @ 67A, 10V
Vgs(th) (Max) @ Id
4V @ 83A
Gate Charge (Qg) (Max) @ Vgs
64 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4340 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3

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